inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 13N50 features drain current i d = 13a@ t c =25 drain source voltage- : v dss = 500v(min) low on resistance r ds(on) = 0.48 (max) fast switching descrition high efficiency switch mode power supply power factor correction electronic lamp ballast absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 500 v v gs gate-source voltage-continuous 30 v i d drain current-continuous 13 a i dm drain current-single plused 52 a p d power dissipation 195 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 0.64 /w r th j-a thermal resistance, junction to ambient 62.5 /w
inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 13N50 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 500 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 6.5a 0.48 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 500v; v gs = 0 1 a v sd forward on-voltage i s = 13a; v gs = 0 1.4 v
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